Study of SiNx:Hy passivant layers for AlGaN/GaN high electron mobility transistors

  1. Redondo-Cubero, A.
  2. Gago, R.
  3. Romero, M.F.
  4. Jiménez, A.
  5. González-Posada, F.
  6. Braña, A.F.
  7. Muñoz, E.
Journal:
Physica Status Solidi (C) Current Topics in Solid State Physics

ISSN: 1862-6351 1610-1642

Year of publication: 2008

Volume: 5

Issue: 2

Pages: 518-521

Type: Conference paper

DOI: 10.1002/PSSC.200777473 GOOGLE SCHOLAR