Potencia máxima de un haz láser pulsante para la caracterización del arseniuro de galio

  1. García, J.
  2. Sendra Pons, Juan Rafael
  3. Pino Suárez, Francisco Javier del
  4. Hernández, A.
  5. Ballestín González, Francisco
Journal:
Vector plus: miscelánea científico - cultural

ISSN: 1134-5306

Year of publication: 2002

Issue: 19

Pages: 28-33

Type: Article

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Abstract

Some physical properties of semiconductor materials can be measured by applying a laser beam on and analyzing the resulting conduction phenomena. However, incident radiation may increase the material temperature to the point of turning out erroneous measured values.This work deals with the study of this technique when applied to the characterization of GaAs material. The analysis method is based on numerical simulation, under experimental constraints, of the actual situation. The results limit the maximum applied laser beam power, maintaining the material temperature into acceptable values.

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