Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering

  1. Núñez-Cascajero, A.
  2. Valdueza-Felip, S.
  3. Blasco, R.
  4. de la Mata, M.
  5. Molina, S.I.
  6. González-Herráez, M.
  7. Monroy, E.
  8. Naranjo, F.B.
Revue:
Journal of Alloys and Compounds

ISSN: 0925-8388

Année de publication: 2018

Volumen: 769

Pages: 824-830

Type: Article

DOI: 10.1016/J.JALLCOM.2018.08.059 GOOGLE SCHOLAR

Objectifs de Développement Durable