Impact of N 2 plasma power discharge on AlGaN/GaN HEMT performance

  1. Romero, M.-F.
  2. Jiménez, A.
  3. González-Posada, F.
  4. Martín-Horcajo, S.
  5. Calle, F.
  6. Muñoz, E.
Journal:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year of publication: 2012

Volume: 59

Issue: 2

Pages: 374-379

Type: Article

DOI: 10.1109/TED.2011.2176947 GOOGLE SCHOLAR