Comparison of the Material Quality of AlxIn1−xN (x—0–0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering

1. Sun, M.
2. Blasco, R.
3. Nwodo, J.
4. de la Mata, M.
5. Molina, S.I.
6. Ajay, A.
7. Monroy, E.
8. Valdueza-Felip, S.
9. Naranjo, F.B.

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DOI: 10.3390/MA15207373 GOOGLE SCHOLAR lock_openOpen access editor HANDLE: https://hdl.handle.net/10498/28831 HANDLE: https://hdl.handle.net/10017/63269

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Data source: Scopus