The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

1. Sanchez-Garcia, M.A.
2. Calleja, E.
3. Monroy, E.
4. Sanchez, F.J.
5. Calle, F.
6. Muñoz, E.
7. Beresford, R.