The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

  1. Sanchez-Garcia, M.A.
  2. Calleja, E.
  3. Monroy, E.
  4. Sanchez, F.J.
  5. Calle, F.
  6. Muñoz, E.
  7. Beresford, R.
Revista:
Journal of Crystal Growth

ISSN: 0022-0248

Any de publicació: 1998

Volum: 183

Número: 1-2

Pàgines: 23-30

Tipus: Article

DOI: 10.1016/S0022-0248(97)00386-2 GOOGLE SCHOLAR