Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
- Sánchez-García, M.A.
- Calleja, E.
- Monroy, E.
- Sánchez, F.J.
- Calle, F.
- Muñoz, E.
- Hervas, A.S.
- Villar, C.
- Aguilar, M.
Zeitschrift:
MRS Internet Journal of Nitride Semiconductor Research
ISSN: 1092-5783
Datum der Publikation: 1997
Ausgabe: 2
Art: Artikel