Ingeniería Electrónica aplicada a Espacios Inteligentes y Transporte ; Electronic Engineering Applied to Intelligent Spaces and Transport
GEINTRA
University of California, Santa Barbara
Santa Bárbara, Estados UnidosPublicaciones en colaboración con investigadores/as de University of California, Santa Barbara (3)
2002
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Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs
IEEE Electron Device Letters
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P-GaN/AlGaN/GaN high electron mobility transistors
Device Research Conference - Conference Digest, DRC, Vol. 2002-January, pp. 25-26
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Transport properties of 2DEGs in AlGaN/GaN heterostructures: Spin splitting and occupation of higher subbands
Physica Status Solidi (B) Basic Research