Publicaciones en las que colabora con Enrique Calleja Pardo (32)

2020

  1. III-nitrides resonant cavity photodetector devices

    Materials, Vol. 13, Núm. 19, pp. 1-12

2018

  1. Effect of different buffer layers on the quality of InGaN layers grown on Si

    AIP Advances, Vol. 8, Núm. 10

2005

  1. Pressure behavior of beryllium-acceptor level in gallium nitride

    Journal of Applied Physics, Vol. 97, Núm. 4

  2. Resonant Raman scattering in strained and relaxed InGaN/GaN multi-quantum wells

    Applied Physics Letters, Vol. 86, Núm. 6, pp. 1-3

  3. Resonant Raman scattering in strained and relaxed inxGa 1-xN/GaN multiple quantum wells

    Materials Science Forum

  4. Resonant Raman study of strain and composition in InGaN multiquantum wells

    AIP Conference Proceedings

2004

  1. Efficiency optimization of p-type doping in GaN:Mg layers grown by molecular-beam epitaxy

    Journal of Crystal Growth, Vol. 270, Núm. 3-4, pp. 542-546

  2. Local vibrational modes of H complexes in Mg-doped GaN grown by molecular beam epitaxy

    Applied Physics Letters, Vol. 84, Núm. 6, pp. 897-899

2003

  1. Anomalous composition dependence of optical energies of MBE-grown InGaN

    Materials Research Society Symposium - Proceedings

  2. Hydrogen-related local vibrational modes in GaN:Mg grown by molecular beam epitaxy

    Materials Research Society Symposium - Proceedings

2002

  1. Experimental characterisation of GaN-based resonant cavity light emitting diodes

    Physica Status Solidi (A) Applied Research

  2. From ultraviolet to green InGaN-based conventional and resonant-cavity light-emitting diodes grown by molecular beam epitaxy

    Physica Status Solidi (A) Applied Research

  3. Growth and characterization of high-quality 10-period AlGaN/GaN Bragg reflectors grown by molecular beam epitaxy

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  4. High-quality distributed Bragg reflectors for resonant-cavity light-emitting diode applications

    Physica Status Solidi (A) Applied Research

  5. Nitride RCLEDs grown by MBE for POF applications

    Physica Status Solidi (A) Applied Research

  6. Plasma-assisted MBE growth of group-III nitrides: From basics to device applications

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  7. Resonant-cavity InGaN multiple-quantum-well green light-emitting diode grown by molecular-beam epitaxy

    Applied Physics Letters, Vol. 80, Núm. 12, pp. 2198-2200

  8. Strong localization in InGaN layers with high in content grown by molecular-beam epitaxy

    Applied Physics Letters, Vol. 80, Núm. 2, pp. 231-233

  9. Structural and optical characterization of thick InGaN layers and InGaN/GaN MQW grown by molecular beam epitaxy

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

2001

  1. AlGaN photodetectors grown on Si(1 1 1) by molecular beam epitaxy

    Journal of Crystal Growth, Vol. 230, Núm. 3-4, pp. 544-548