Grupo de Ingeniería Fotónica ; Photonics Engineering Group
GRIFO
Centre National de la Recherche Scientifique
París, FranciaPublicaciones en colaboración con investigadores/as de Centre National de la Recherche Scientifique (4)
2014
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Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
Applied Physics Letters, Vol. 105, Núm. 13
2010
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P-type doping of semipolar GaN(1122) by plasma-assisted molecular-beam epitaxy
Physica Status Solidi (C) Current Topics in Solid State Physics
2004
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Efficiency optimization of p-type doping in GaN:Mg layers grown by molecular-beam epitaxy
Journal of Crystal Growth, Vol. 270, Núm. 3-4, pp. 542-546
2002
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Experimental characterisation of GaN-based resonant cavity light emitting diodes
Physica Status Solidi (A) Applied Research