Publicaciones en las que colabora con Enrique Calleja Pardo (8)

2003

  1. Improved AlGaN/GaN high electron mobility transistor using AlN interlayers

    Applied Physics Letters, Vol. 82, Núm. 26, pp. 4827-4829

2002

  1. Correlation between transport, optical and structural properties in AlGaN/GaN heterostructures

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs

    IEEE Electron Device Letters

  3. Plasma-assisted MBE growth of group-III nitrides: From basics to device applications

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  4. Transport properties of 2DEGs in AlGaN/GaN heterostructures: Spin splitting and occupation of higher subbands

    Physica Status Solidi (B) Basic Research

2000

  1. Study of the effects of Mg and Be co-doping in GaN layers

    Physica Status Solidi (A) Applied Research, Vol. 180, Núm. 1, pp. 97-102

  2. Ultraviolet electroluminescence in GaN/AIGaN single-heterojunction light-emitting diodes grown on Si(111)

    Journal of Applied Physics, Vol. 87, Núm. 3, pp. 1569-1571

1999

  1. Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE

    Physica Status Solidi (A) Applied Research, Vol. 176, Núm. 1, pp. 447-452