Ana
Jiménez Martín
Profesor/a Titular Universidad
![Foto de Enrique](/img/nophoto.png)
Enrique
Calleja Pardo
Publicaciones en las que colabora con Enrique Calleja Pardo (8)
2003
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Improved AlGaN/GaN high electron mobility transistor using AlN interlayers
Applied Physics Letters, Vol. 82, Núm. 26, pp. 4827-4829
2002
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Correlation between transport, optical and structural properties in AlGaN/GaN heterostructures
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs
IEEE Electron Device Letters
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Plasma-assisted MBE growth of group-III nitrides: From basics to device applications
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Transport properties of 2DEGs in AlGaN/GaN heterostructures: Spin splitting and occupation of higher subbands
Physica Status Solidi (B) Basic Research
2000
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Study of the effects of Mg and Be co-doping in GaN layers
Physica Status Solidi (A) Applied Research, Vol. 180, Núm. 1, pp. 97-102
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Ultraviolet electroluminescence in GaN/AIGaN single-heterojunction light-emitting diodes grown on Si(111)
Journal of Applied Physics, Vol. 87, Núm. 3, pp. 1569-1571
1999
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Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE
Physica Status Solidi (A) Applied Research, Vol. 176, Núm. 1, pp. 447-452