José Luis Pau Vizcaino-rekin lankidetzan egindako argitalpenak (4)

2002

  1. Plasma-assisted MBE growth of group-III nitrides: From basics to device applications

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

2000

  1. Study of the effects of Mg and Be co-doping in GaN layers

    Physica Status Solidi (A) Applied Research, Vol. 180, Núm. 1, pp. 97-102

  2. Ultraviolet electroluminescence in GaN/AIGaN single-heterojunction light-emitting diodes grown on Si(111)

    Journal of Applied Physics, Vol. 87, Núm. 3, pp. 1569-1571

1999

  1. Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE

    Physica Status Solidi (A) Applied Research, Vol. 176, Núm. 1, pp. 447-452