Publications in collaboration with researchers from University of California, Santa Barbara (3)

2002

  1. Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs

    IEEE Electron Device Letters

  2. P-GaN/AlGaN/GaN high electron mobility transistors

    Device Research Conference - Conference Digest, DRC, Vol. 2002-January, pp. 25-26

  3. Transport properties of 2DEGs in AlGaN/GaN heterostructures: Spin splitting and occupation of higher subbands

    Physica Status Solidi (B) Basic Research