Publicaciones en colaboración con investigadores/as de Instituto de Óptica Daza de Valdés (18)

2022

  1. Ultralong ring laser supercontinuum sources using standard telecommunication fibre

    Optics and Laser Technology, Vol. 147

2021

  1. Sub-250 fs passively mode-locked ultralong ring fibre oscillators

    Optics and Laser Technology, Vol. 138

2019

  1. Megawatt peak-power femtosecond ultralong ring fibre laser with InN SESAM

    2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019

  2. Megawatt peak-power femtosecond ultralong ring fibre laser with InN SESAM

    Optics InfoBase Conference Papers

2017

  1. Sub-200 fs mode-locked fiber laser with InN-based SESAM

    Optics InfoBase Conference Papers

  2. Sub-250 fs, 650 kW Peak Power Harmonic Mode-Locked Fiber Laser with InN-based SESAM

    European Conference on Optical Communication, ECOC

2016

  1. III-nitride-based waveguides for ultrafast all-optical signal processing at 1.55 μm

    Physica Status Solidi (A) Applications and Materials Science, Vol. 213, Núm. 5, pp. 1269-1275

  2. Infrared SPR sensing with III-nitride dielectric layers

    Sensors and Actuators, B: Chemical, Vol. 223, pp. 768-773

2015

  1. InN-based optical waveguides developed by RF sputtering for all-optical applications at 1.55 μm

    IEEE Photonics Technology Letters, Vol. 27, Núm. 17, pp. 1857-1860

2013

  1. Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs

    Optics Express, Vol. 21, Núm. 23, pp. 27578-27586

2011

  1. Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths

    Applied Physics Letters, Vol. 98, Núm. 3

2009

  1. Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5 μm

    Microelectronics Journal, Vol. 40, Núm. 2, pp. 349-352

2008

  1. Characterization of the resonant third-order nonlinear susceptibility of Si-doped GaN-AlN quantum wells and quantum dots at 1.5 μm

    IEEE Photonics Technology Letters, Vol. 20, Núm. 16, pp. 1366-1368

  2. Characterization of the resonant third-order nonlinear susceptibility of Si-doped GaN/AlN quantum wells and quantum dots at 1.5 μm

    Optics InfoBase Conference Papers

2007

  1. Novel nitride - Based materials for nonlinear optical signal processing applications at 1.5 μm

    2007 IEEE International Symposium on Intelligent Signal Processing, WISP

  2. Physical properties of InN for optically controlling the speed of light

    Optics InfoBase Conference Papers

  3. Physical properties of InN for optically controlling the speed of light

    Optics InfoBase Conference Papers

  4. Third order nonlinear susceptibility of InN at near band-gap wavelengths

    Applied Physics Letters, Vol. 90, Núm. 9