Characterization of the resonant third-order nonlinear susceptibility of Si-doped GaN/AlN quantum wells and quantum dots at 1.5 μm

1. Valdueza-Felip, S.
2. Naranjo, F.B.
3. González-Herráez, M.
4. Fernández, H.
5. Solis, J.
6. Guillot, F.
7. Monroy, E.
8. Tchernycheva, M.
9. Nevou, L.
10. Julián, F.H.