Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

  1. Romero, M.F.
  2. Sanz, M.M.
  3. Tanarro, I.
  4. Jiménez, A.
  5. Muñoz, E.
Journal:
Journal of Physics D: Applied Physics

ISSN: 0022-3727,  1361-6463

Year of publication: 2010

Volume: 43

Issue: 49

Type: Article

DOI: 10.1088/0022-3727/43/49/495202 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus