Effect of different buffer layers on the quality of InGaN layers grown on Si

  1. Gómez, V.J.
  2. Grandal, J.
  3. Núñez-Cascajero, A.
  4. Naranjo, F.B.
  5. Varela, M.
  6. Sánchez-García, M.A.
  7. Calleja, E.
Revue:
AIP Advances

ISSN: 2158-3226

Année de publication: 2018

Volumen: 8

Número: 10

Type: Article

DOI: 10.1063/1.5046756 GOOGLE SCHOLAR lock_openAccès ouvert editor
La source de données: Scopus