Exciton and donor-acceptor recombination in undoped GaN on Si(111)

  1. Calle, F.
  2. Sánchez, F.J.
  3. Tijero, J.M.G.
  4. Sánchez-García, M.A.
  5. Calleja, E.
  6. Beresford, R.
Journal:
Semiconductor Science and Technology

ISSN: 0268-1242

Year of publication: 1997

Volume: 12

Issue: 11

Pages: 1396-1403

Type: Article

DOI: 10.1088/0268-1242/12/11/011 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus