Publicaciones en las que colabora con Arántzazu Núñez Cascajero (16)

2021

  1. Structural characterization of Al0.37In0.63N/ALN/p-Si (111) heterojunctions grown by rf sputtering for solar cell applications

    Materials, Vol. 14, Núm. 9

2019

  1. High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering

    Materials Science in Semiconductor Processing, Vol. 100, pp. 8-14

  2. Influence of the AlInN Thickness on the Photovoltaic Characteristics of AlInN on Si Solar Cells Deposited by RF Sputtering

    Physica Status Solidi (A) Applications and Materials Science, Vol. 216, Núm. 1

2018

  1. Effect of different buffer layers on the quality of InGaN layers grown on Si

    AIP Advances, Vol. 8, Núm. 10

  2. Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering

    AIP Advances, Vol. 8, Núm. 11

  3. Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering

    Journal of Alloys and Compounds, Vol. 769, pp. 824-830

  4. Study of absorption saturation in InN thin films through the Z-Scan technique at 1.55 μm

    Optics InfoBase Conference Papers

2017

  1. Development of AlInN photoconductors deposited by sputtering

    Physica Status Solidi (A) Applications and Materials Science, Vol. 214, Núm. 9

  2. In-rich AlxIn1-xN grown by RF-sputtering on sapphire: From closely-packed columnar to high-surface quality compact layers

    Journal of Physics D: Applied Physics, Vol. 50, Núm. 6

2016

  1. Desarrollo de nitruros basados en InN para aplicaciones fotovoltaicas

    Quintas Jornadas de Jóvenes Investigadores de la Universidad de Alcalá: Ciencias e Ingenierías

  2. Estudio y aplicaciones de láseres de pulsos ultracortos basados en anclaje de modos

    Quintas Jornadas de Jóvenes Investigadores de la Universidad de Alcalá: Ciencias e Ingenierías

  3. Infrared SPR sensing with III-nitride dielectric layers

    Sensors and Actuators, B: Chemical, Vol. 223, pp. 768-773

  4. Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer

    Journal of Crystal Growth, Vol. 434, pp. 13-18

  5. Study of high In-content AlInN deposition on p-Si(111) by RF-sputtering

    Japanese Journal of Applied Physics

2015

  1. Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells

    Japanese Journal of Applied Physics, Vol. 54, Núm. 7

2013

  1. Two-step method for the deposition of AlN by radio frequency sputtering

    Thin Solid Films, Vol. 545, pp. 149-153