Laura Monteagudo Lerma-rekin lankidetzan egindako argitalpenak (15)

2017

  1. A new ultrafast and high peak power fiber laser operating at 1.5 μm using In N as Saturable Absorber

    2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings

  2. A new ultrafast and high peak power fiber laser operating at 1.5 μm using InN as saturable absorber

    Optics InfoBase Conference Papers

  3. In-rich AlxIn1-xN grown by RF-sputtering on sapphire: From closely-packed columnar to high-surface quality compact layers

    Journal of Physics D: Applied Physics, Vol. 50, Núm. 6

  4. Widely power-tunable polarizationindependent ultrafast mode-locked fiber laser using bulk InN as saturable absorber

    Optics Express, Vol. 25, Núm. 5, pp. 5366-5375

2016

  1. Desarrollo de nitruros basados en InN para aplicaciones fotovoltaicas

    Quintas Jornadas de Jóvenes Investigadores de la Universidad de Alcalá: Ciencias e Ingenierías

  2. Estudio y aplicaciones de láseres de pulsos ultracortos basados en anclaje de modos

    Quintas Jornadas de Jóvenes Investigadores de la Universidad de Alcalá: Ciencias e Ingenierías

  3. III-nitride-based waveguides for ultrafast all-optical signal processing at 1.55 μm

    Physica Status Solidi (A) Applications and Materials Science, Vol. 213, Núm. 5, pp. 1269-1275

  4. Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer

    Journal of Crystal Growth, Vol. 434, pp. 13-18

  5. Study of high In-content AlInN deposition on p-Si(111) by RF-sputtering

    Japanese Journal of Applied Physics

2015

  1. InN-based optical waveguides developed by RF sputtering for all-optical applications at 1.55 μm

    IEEE Photonics Technology Letters, Vol. 27, Núm. 17, pp. 1857-1860

2013

  1. Two-step method for the deposition of AlN by radio frequency sputtering

    Thin Solid Films, Vol. 545, pp. 149-153

  2. Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs

    Optics Express, Vol. 21, Núm. 23, pp. 27578-27586

2012

  1. Influence of substrate biasing on the growth of c-axis oriented AlN thin films by RF reactive sputtering in pure nitrogen

    Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 9, Núm. 3-4, pp. 1074-1078

  2. Nonlinear absorption at optical telecommunication wavelengths of InN films deposited by RF sputtering

    IEEE Photonics Technology Letters, Vol. 24, Núm. 22, pp. 1998-2000

2010

  1. Low-cost, self-referenced all-fibre polarimetric current sensor for the monitoring of current in the railway catenary

    Proceedings of SPIE - The International Society for Optical Engineering