Publicaciones en las que colabora con Pierre Ruterana (6)

2019

  1. Effect of the residual doping on the performance of InN epilayers as saturable absorbers for ultrafast lasers at 1.55μm

    Optical Materials Express, Vol. 9, Núm. 7, pp. 2785-2792

2017

  1. P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm

    Solar Energy Materials and Solar Cells, Vol. 160, pp. 355-360

2012

  1. Carrier localization in InN/InGaN multiple-quantum wells with high In-content

    Applied Physics Letters, Vol. 101, Núm. 6

  2. Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

    Physica Status Solidi (A) Applications and Materials Science, Vol. 209, Núm. 1, pp. 17-20

2011

  1. Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths

    Applied Physics Letters, Vol. 98, Núm. 3

2010

  1. P-type doping of semipolar GaN(1122) by plasma-assisted molecular-beam epitaxy

    Physica Status Solidi (C) Current Topics in Solid State Physics