Publications in collaboration with researchers from Universidad Politécnica de Madrid (11)

2008

  1. AlGaN/GaN-based saw delay-line oscillators

    Microwave and Optical Technology Letters, Vol. 50, Núm. 11, pp. 2967-2970

  2. Effects of N2 plasma pretreatment on the SiN passivation of AlGaN/GaN HEMT

    IEEE Electron Device Letters, Vol. 29, Núm. 3, pp. 209-211

2005

  1. Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs

    Physica Status Solidi C: Conferences

  2. Improved AlGaN/GaN HEMTs using Fe doping

    2005 Spanish Conference on Electron Devices, Proceedings

2003

  1. Improved AlGaN/GaN high electron mobility transistor using AlN interlayers

    Applied Physics Letters, Vol. 82, Núm. 26, pp. 4827-4829

2002

  1. Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs

    IEEE Electron Device Letters

  2. Transport properties of 2DEGs in AlGaN/GaN heterostructures: Spin splitting and occupation of higher subbands

    Physica Status Solidi (B) Basic Research

2000

  1. Study of the effects of Mg and Be co-doping in GaN layers

    Physica Status Solidi (A) Applied Research, Vol. 180, Núm. 1, pp. 97-102

  2. Ultraviolet electroluminescence in GaN/AIGaN single-heterojunction light-emitting diodes grown on Si(111)

    Journal of Applied Physics, Vol. 87, Núm. 3, pp. 1569-1571

1999

  1. Polarization field determination in AlGaN/GaN HFETs

    Physica Status Solidi (A) Applied Research, Vol. 176, Núm. 1, pp. 195-199

  2. Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE

    Physica Status Solidi (A) Applied Research, Vol. 176, Núm. 1, pp. 447-452