Publicacións (111) Publicacións de Fernando Bernabé Naranjo Vega

2024

  1. InN nanowire solar cells on Si with amorphous Si interlayer deposited by sputtering

    Materials Science in Semiconductor Processing, Vol. 176

2023

  1. Amorphous Silicon Films and Nanocolumns Deposited on Sapphire and GaN by DC Sputtering

    Physica Status Solidi (B) Basic Research, Vol. 260, Núm. 8

  2. Numerical evaluation of spectral coverage and spectral resolution in coherent Raman scattering spectroscopy using a broadband fiber laser source

    Journal of Raman Spectroscopy, Vol. 54, Núm. 9, pp. 1001-1010

2022

  1. Analysis of spectral coverage and resolution performance in spectral focusing CARS spectroscopy

    Optics InfoBase Conference Papers

  2. Analysis of spectral coverage and resolution performance in spectral focusing CARS spectroscopy

    2022 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2022 - Proceedings

  3. Comparison of the Material Quality of AlxIn1−xN (x—0–0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering

    Materials, Vol. 15, Núm. 20

  4. Ultralong ring laser supercontinuum sources using standard telecommunication fibre

    Optics and Laser Technology, Vol. 147

2021

  1. Aplicación de láseres de pulsos ultracortos en el sensado remoto de gases

    Octavas Jornadas de Jóvenes Investigadores de la Universidad de Alcalá: Ciencias, Ciencias de la Salud e Ingenierías

  2. High energy ultrafast all-fiber laser based on InN-GRIN saturable absorber

    Optics InfoBase Conference Papers

  3. Performance enhancement of an ultrafast all-fiber laser based on an InN saturable absorber using GRIN coupling

    Optics Express, Vol. 29, Núm. 18, pp. 29357-29365

  4. Structural characterization of Al0.37In0.63N/ALN/p-Si (111) heterojunctions grown by rf sputtering for solar cell applications

    Materials, Vol. 14, Núm. 9

  5. Sub-250 fs passively mode-locked ultralong ring fibre oscillators

    Optics and Laser Technology, Vol. 138

2020

  1. AlxIn1-xN on Si (100) Solar Cells (x = 0-0.56) deposited by RF sputtering

    Materials, Vol. 13, Núm. 10

  2. Design of AlInN on silicon heterojunctions grown by sputtering for solar devices

    Current Applied Physics, Vol. 20, Núm. 11, pp. 1244-1252

  3. High-quality, InN-based, saturable absorbers for ultrafast laser development

    Applied Sciences (Switzerland), Vol. 10, Núm. 21, pp. 1-11

  4. III-nitrides resonant cavity photodetector devices

    Materials, Vol. 13, Núm. 19, pp. 1-12

  5. Low-to-Mid Al Content (x = 0–0.56) AlxIn1−xN Layers Deposited on Si(100) by Radio-Frequency Sputtering

    Physica Status Solidi (B) Basic Research, Vol. 257, Núm. 4

2019

  1. Effect of the residual doping on the performance of InN epilayers as saturable absorbers for ultrafast lasers at 1.55μm

    Optical Materials Express, Vol. 9, Núm. 7, pp. 2785-2792

  2. High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering

    Materials Science in Semiconductor Processing, Vol. 100, pp. 8-14

  3. Influence of the AlInN Thickness on the Photovoltaic Characteristics of AlInN on Si Solar Cells Deposited by RF Sputtering

    Physica Status Solidi (A) Applications and Materials Science, Vol. 216, Núm. 1