Publikationen, an denen er mitarbeitet Miguel González Herráez (20)

2018

  1. Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering

    Journal of Alloys and Compounds, Vol. 769, pp. 824-830

2017

  1. In-rich AlxIn1-xN grown by RF-sputtering on sapphire: From closely-packed columnar to high-surface quality compact layers

    Journal of Physics D: Applied Physics, Vol. 50, Núm. 6

2016

  1. Desarrollo de nitruros basados en InN para aplicaciones fotovoltaicas

    Quintas Jornadas de Jóvenes Investigadores de la Universidad de Alcalá: Ciencias e Ingenierías

  2. III-nitride-based waveguides for ultrafast all-optical signal processing at 1.55 μm

    Physica Status Solidi (A) Applications and Materials Science, Vol. 213, Núm. 5, pp. 1269-1275

  3. Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer

    Journal of Crystal Growth, Vol. 434, pp. 13-18

  4. Study of high In-content AlInN deposition on p-Si(111) by RF-sputtering

    Japanese Journal of Applied Physics

2013

  1. Two-step method for the deposition of AlN by radio frequency sputtering

    Thin Solid Films, Vol. 545, pp. 149-153

  2. Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs

    Optics Express, Vol. 21, Núm. 23, pp. 27578-27586

2012

  1. Carrier localization in InN/InGaN multiple-quantum wells with high In-content

    Applied Physics Letters, Vol. 101, Núm. 6

  2. Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

    Thin Solid Films, Vol. 520, Núm. 7, pp. 2805-2809

  3. Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

    Physica Status Solidi (A) Applications and Materials Science, Vol. 209, Núm. 1, pp. 17-20

  4. Nonlinear absorption at optical telecommunication wavelengths of InN films deposited by RF sputtering

    IEEE Photonics Technology Letters, Vol. 24, Núm. 22, pp. 1998-2000

2011

  1. High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering

    Physica Status Solidi (A) Applications and Materials Science, Vol. 208, Núm. 1, pp. 65-69

  2. Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths

    Applied Physics Letters, Vol. 98, Núm. 3

2010

  1. Influence of deposition conditions on nanocrystalline InN layers synthesized on Si(1 1 1) and GaN templates by RF sputtering

    Journal of Crystal Growth, Vol. 312, Núm. 19, pp. 2689-2694

  2. Novel InN/InGaN multiple quantum well structures for slow-light generation at telecommunication wavelengths

    Physica Status Solidi (C) Current Topics in Solid State Physics

2009

  1. Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5 μm

    Microelectronics Journal, Vol. 40, Núm. 2, pp. 349-352

2008

  1. Characterization of the resonant third-order nonlinear susceptibility of Si-doped GaN-AlN quantum wells and quantum dots at 1.5 μm

    IEEE Photonics Technology Letters, Vol. 20, Núm. 16, pp. 1366-1368

  2. Characterization of the resonant third-order nonlinear susceptibility of Si-doped GaN/AlN quantum wells and quantum dots at 1.5 μm

    Optics InfoBase Conference Papers

2007

  1. Novel nitride - Based materials for nonlinear optical signal processing applications at 1.5 μm

    2007 IEEE International Symposium on Intelligent Signal Processing, WISP