Sirona
Valdueza Felip
Profesor/a Titular Universidad
Pierre
Ruterana
Publicacions en què col·labora amb Pierre Ruterana (5)
2017
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P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm
Solar Energy Materials and Solar Cells, Vol. 160, pp. 355-360
2012
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Carrier localization in InN/InGaN multiple-quantum wells with high In-content
Applied Physics Letters, Vol. 101, Núm. 6
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Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells
Physica Status Solidi (A) Applications and Materials Science, Vol. 209, Núm. 1, pp. 17-20
2011
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Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths
Applied Physics Letters, Vol. 98, Núm. 3
2010
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P-type doping of semipolar GaN(1122) by plasma-assisted molecular-beam epitaxy
Physica Status Solidi (C) Current Topics in Solid State Physics