Ultraviolet electroluminescence in GaN/AIGaN single-heterojunction light-emitting diodes grown on Si(111)

  1. Sánchez-García, M.A.
  2. Naranjo, F.B.
  3. Pau, J.L.
  4. Jiménez, A.
  5. Calleja, E.
  6. Muñoz, E.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 2000

Volume: 87

Issue: 3

Pages: 1569-1571

Type: Article

DOI: 10.1063/1.372052 GOOGLE SCHOLAR
Data source: Scopus