Alejandro Francisco Braña de Cal-rekin lankidetzan egindako argitalpenak (7)

2008

  1. Effects of N2 plasma pretreatment on the SiN passivation of AlGaN/GaN HEMT

    IEEE Electron Device Letters, Vol. 29, Núm. 3, pp. 209-211

  2. Study of SiNx:Hy passivant layers for AlGaN/GaN high electron mobility transistors

    Physica Status Solidi (C) Current Topics in Solid State Physics

2007

  1. 2-DEG characteristics improvement by N2plasma exposure in GaN HEMT heterostructures

    2007 Spanish Conference on Electron Devices, Proceedings

2006

  1. Bias selection for conversion and linearity optimization in a GaN HEMT resistive mixer

    2006 International Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits, INMMIC 2006 - Proceedings

2005

  1. Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs

    Physica Status Solidi C: Conferences

  2. Improved AlGaN/GaN HEMTs using Fe doping

    2005 Spanish Conference on Electron Devices, Proceedings

2003

  1. Improved AlGaN/GaN high electron mobility transistor using AlN interlayers

    Applied Physics Letters, Vol. 82, Núm. 26, pp. 4827-4829