Ana
Jiménez Martín
Profesor/a Titular Universidad
![Foto de Ana](/img/nophoto.png)
![Foto de Universidad Politécnica de Madrid](/img/noimage_org.png)
Universidad Politécnica de Madrid
Madrid, EspañaPublicaciones en colaboración con investigadores/as de Universidad Politécnica de Madrid (11)
2008
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AlGaN/GaN-based saw delay-line oscillators
Microwave and Optical Technology Letters, Vol. 50, Núm. 11, pp. 2967-2970
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Effects of N2 plasma pretreatment on the SiN passivation of AlGaN/GaN HEMT
IEEE Electron Device Letters, Vol. 29, Núm. 3, pp. 209-211
2005
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Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs
Physica Status Solidi C: Conferences
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Improved AlGaN/GaN HEMTs using Fe doping
2005 Spanish Conference on Electron Devices, Proceedings
2003
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Improved AlGaN/GaN high electron mobility transistor using AlN interlayers
Applied Physics Letters, Vol. 82, Núm. 26, pp. 4827-4829
2002
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Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs
IEEE Electron Device Letters
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Transport properties of 2DEGs in AlGaN/GaN heterostructures: Spin splitting and occupation of higher subbands
Physica Status Solidi (B) Basic Research
2000
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Study of the effects of Mg and Be co-doping in GaN layers
Physica Status Solidi (A) Applied Research, Vol. 180, Núm. 1, pp. 97-102
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Ultraviolet electroluminescence in GaN/AIGaN single-heterojunction light-emitting diodes grown on Si(111)
Journal of Applied Physics, Vol. 87, Núm. 3, pp. 1569-1571
1999
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Polarization field determination in AlGaN/GaN HFETs
Physica Status Solidi (A) Applied Research, Vol. 176, Núm. 1, pp. 195-199
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Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE
Physica Status Solidi (A) Applied Research, Vol. 176, Núm. 1, pp. 447-452