Publicacions en què col·labora amb Arántzazu Núñez Cascajero (10)

2019

  1. High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering

    Materials Science in Semiconductor Processing, Vol. 100, pp. 8-14

  2. Influence of the AlInN Thickness on the Photovoltaic Characteristics of AlInN on Si Solar Cells Deposited by RF Sputtering

    Physica Status Solidi (A) Applications and Materials Science, Vol. 216, Núm. 1

2018

  1. Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering

    AIP Advances, Vol. 8, Núm. 11

  2. Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering

    Journal of Alloys and Compounds, Vol. 769, pp. 824-830

2017

  1. In-rich AlxIn1-xN grown by RF-sputtering on sapphire: From closely-packed columnar to high-surface quality compact layers

    Journal of Physics D: Applied Physics, Vol. 50, Núm. 6

2016

  1. Desarrollo de nitruros basados en InN para aplicaciones fotovoltaicas

    Quintas Jornadas de Jóvenes Investigadores de la Universidad de Alcalá: Ciencias e Ingenierías

  2. Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer

    Journal of Crystal Growth, Vol. 434, pp. 13-18

  3. Study of high In-content AlInN deposition on p-Si(111) by RF-sputtering

    Japanese Journal of Applied Physics

2015

  1. Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells

    Japanese Journal of Applied Physics, Vol. 54, Núm. 7

2013

  1. Two-step method for the deposition of AlN by radio frequency sputtering

    Thin Solid Films, Vol. 545, pp. 149-153