Sirona
Valdueza Felip
Profesor/a Titular Universidad
Arántzazu
Núñez Cascajero
Publications by the researcher in collaboration with Arántzazu Núñez Cascajero (10)
2019
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High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering
Materials Science in Semiconductor Processing, Vol. 100, pp. 8-14
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Influence of the AlInN Thickness on the Photovoltaic Characteristics of AlInN on Si Solar Cells Deposited by RF Sputtering
Physica Status Solidi (A) Applications and Materials Science, Vol. 216, Núm. 1
2018
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Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering
AIP Advances, Vol. 8, Núm. 11
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Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering
Journal of Alloys and Compounds, Vol. 769, pp. 824-830
2017
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In-rich AlxIn1-xN grown by RF-sputtering on sapphire: From closely-packed columnar to high-surface quality compact layers
Journal of Physics D: Applied Physics, Vol. 50, Núm. 6
2016
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Desarrollo de nitruros basados en InN para aplicaciones fotovoltaicas
Quintas Jornadas de Jóvenes Investigadores de la Universidad de Alcalá: Ciencias e Ingenierías
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Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer
Journal of Crystal Growth, Vol. 434, pp. 13-18
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Study of high In-content AlInN deposition on p-Si(111) by RF-sputtering
Japanese Journal of Applied Physics
2015
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Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells
Japanese Journal of Applied Physics, Vol. 54, Núm. 7
2013
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Two-step method for the deposition of AlN by radio frequency sputtering
Thin Solid Films, Vol. 545, pp. 149-153