Publicaciones en colaboración con investigadores/as de Grenoble Alpes University (12)

2019

  1. Influence of the AlInN Thickness on the Photovoltaic Characteristics of AlInN on Si Solar Cells Deposited by RF Sputtering

    Physica Status Solidi (A) Applications and Materials Science, Vol. 216, Núm. 1

2018

  1. Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering

    AIP Advances, Vol. 8, Núm. 11

  2. Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering

    Journal of Alloys and Compounds, Vol. 769, pp. 824-830

2017

  1. In-rich AlxIn1-xN grown by RF-sputtering on sapphire: From closely-packed columnar to high-surface quality compact layers

    Journal of Physics D: Applied Physics, Vol. 50, Núm. 6

  2. P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm

    Solar Energy Materials and Solar Cells, Vol. 160, pp. 355-360

2016

  1. Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness

    Applied Physics Letters, Vol. 108, Núm. 16

  2. III-nitride-based waveguides for ultrafast all-optical signal processing at 1.55 μm

    Physica Status Solidi (A) Applications and Materials Science, Vol. 213, Núm. 5, pp. 1269-1275

  3. Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer

    Journal of Crystal Growth, Vol. 434, pp. 13-18

  4. Study of high In-content AlInN deposition on p-Si(111) by RF-sputtering

    Japanese Journal of Applied Physics

2015

  1. Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells

    Japanese Journal of Applied Physics, Vol. 54, Núm. 7

2014

  1. Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

    Applied Physics Letters, Vol. 105, Núm. 13

2009

  1. Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5 μm

    Microelectronics Journal, Vol. 40, Núm. 2, pp. 349-352