Argitalpenak (46) Sirona Valdueza Felip argitalpenak

2024

  1. Células solares de nanocolumnas de nitruro de indio sobre silicio amorfo depositadas por pulverización catódica

    Conectando la academia y la industria: Libro de actas OPTOEL 2023 (Editorial Universidad de Sevilla)

  2. Effect of temperature and excitation power on down-conversion process in Tb3+/Yb3+-activated silica-hafnia glass-ceramic films

    Ceramics International

  3. InN nanowire solar cells on Si with amorphous Si interlayer deposited by sputtering

    Materials Science in Semiconductor Processing, Vol. 176

2023

  1. Amorphous Silicon Films and Nanocolumns Deposited on Sapphire and GaN by DC Sputtering

    Physica Status Solidi (B) Basic Research, Vol. 260, Núm. 8

2022

  1. Comparison of the Material Quality of AlxIn1−xN (x—0–0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering

    Materials, Vol. 15, Núm. 20

2020

  1. AlxIn1-xN on Si (100) Solar Cells (x = 0-0.56) deposited by RF sputtering

    Materials, Vol. 13, Núm. 10

  2. Design of AlInN on silicon heterojunctions grown by sputtering for solar devices

    Current Applied Physics, Vol. 20, Núm. 11, pp. 1244-1252

  3. Low-to-Mid Al Content (x = 0–0.56) AlxIn1−xN Layers Deposited on Si(100) by Radio-Frequency Sputtering

    Physica Status Solidi (B) Basic Research, Vol. 257, Núm. 4

2019

  1. High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering

    Materials Science in Semiconductor Processing, Vol. 100, pp. 8-14

  2. Influence of the AlInN Thickness on the Photovoltaic Characteristics of AlInN on Si Solar Cells Deposited by RF Sputtering

    Physica Status Solidi (A) Applications and Materials Science, Vol. 216, Núm. 1

2018

  1. Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering

    AIP Advances, Vol. 8, Núm. 11

  2. Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering

    Journal of Alloys and Compounds, Vol. 769, pp. 824-830

2017

  1. In-rich AlxIn1-xN grown by RF-sputtering on sapphire: From closely-packed columnar to high-surface quality compact layers

    Journal of Physics D: Applied Physics, Vol. 50, Núm. 6

  2. P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm

    Solar Energy Materials and Solar Cells, Vol. 160, pp. 355-360

2016

  1. Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness

    Applied Physics Letters, Vol. 108, Núm. 16

  2. Desarrollo de nitruros basados en InN para aplicaciones fotovoltaicas

    Quintas Jornadas de Jóvenes Investigadores de la Universidad de Alcalá: Ciencias e Ingenierías

  3. III-nitride-based waveguides for ultrafast all-optical signal processing at 1.55 μm

    Physica Status Solidi (A) Applications and Materials Science, Vol. 213, Núm. 5, pp. 1269-1275

  4. Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer

    Journal of Crystal Growth, Vol. 434, pp. 13-18

  5. Study of high In-content AlInN deposition on p-Si(111) by RF-sputtering

    Japanese Journal of Applied Physics

2015

  1. Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells

    Japanese Journal of Applied Physics, Vol. 54, Núm. 7