Improved AlGaN/GaN high electron mobility transistor using AlN interlayers

  1. Jiménez, A.
  2. Bougrioua, Z.
  3. Tirado, J.M.
  4. Braña, A.F.
  5. Calleja, E.
  6. Muñoz, E.
  7. Moerman, I.
Journal:
Applied Physics Letters

ISSN: 0003-6951

Year of publication: 2003

Volume: 82

Issue: 26

Pages: 4827-4829

Type: Article

DOI: 10.1063/1.1588379 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus