Improved AlGaN/GaN high electron mobility transistor using AlN interlayers

  1. Jiménez, A.
  2. Bougrioua, Z.
  3. Tirado, J.M.
  4. Braña, A.F.
  5. Calleja, E.
  6. Muñoz, E.
  7. Moerman, I.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 2003

Volumen: 82

Número: 26

Pages: 4827-4829

Type: Article

DOI: 10.1063/1.1588379 GOOGLE SCHOLAR
La source de données: Scopus