Resonant-cavity InGaN multiple-quantum-well green light-emitting diode grown by molecular-beam epitaxy

  1. Naranjo, F.B.
  2. Fernández, S.
  3. Sánchez-García, M.A.
  4. Calle, F.
  5. Calleja, E.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 2002

Volumen: 80

Número: 12

Pages: 2198-2200

Type: Article

DOI: 10.1063/1.1463701 GOOGLE SCHOLAR
La source de données: Scopus