Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs

  1. Bougrioua, Z.
  2. Azize, M.
  3. Jimenez, A.
  4. Braña, A.-F.
  5. Lorenzini, P.
  6. Beaumont, B.
  7. Muñoz, E.
  8. Gibart, P.
Proceedings:
Physica Status Solidi C: Conferences

ISSN: 1610-1634

Year of publication: 2005

Volume: 2

Issue: 7

Pages: 2424-2428

Type: Conference paper

DOI: 10.1002/PSSC.200461588 GOOGLE SCHOLAR
Data source: Scopus