Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs

  1. Bougrioua, Z.
  2. Azize, M.
  3. Jimenez, A.
  4. Braña, A.-F.
  5. Lorenzini, P.
  6. Beaumont, B.
  7. Muñoz, E.
  8. Gibart, P.
Aktak:
Physica Status Solidi C: Conferences

ISSN: 1610-1634

Argitalpen urtea: 2005

Alea: 2

Zenbakia: 7

Orrialdeak: 2424-2428

Mota: Biltzar ekarpena

DOI: 10.1002/PSSC.200461588 GOOGLE SCHOLAR