Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs

  1. Jiménez, A.
  2. Buttari, D.
  3. Jena, D.
  4. Coffíe, R.
  5. Heikman, S.
  6. Zhang, N.Q.
  7. Shen, L.
  8. Calleja, E.
  9. Muñoz, E.
  10. Speck, J.
  11. Mishra, U.K.
Journal:
IEEE Electron Device Letters

ISSN: 0741-3106

Year of publication: 2002

Volume: 23

Issue: 6

Pages: 306-308

Type: Letter

DOI: 10.1109/LED.2002.1004217 GOOGLE SCHOLAR
Data source: Scopus