Fernando Calle Gómez-rekin lankidetzan egindako argitalpenak (12)
2001
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Reliability of Schottky Contacts on AlGaN
Physica Status Solidi (A) Applied Research, Vol. 188, Núm. 1, pp. 367-370
2000
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Analysis and modeling of AlxGa1-xN-based Schottky barrier photodiodes
Journal of Applied Physics, Vol. 88, Núm. 4, pp. 2081-2091
1998
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Analysis of the visible and UV electroluminescence in homojunction GaN LED's
MRS Internet Journal of Nitride Semiconductor Research, Vol. 3
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Experimental evidence for a Be shallow acceptor in GaN grown on Si(111) by molecular beam epitaxy
Semiconductor Science and Technology, Vol. 13, Núm. 10, pp. 1130-1133
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High-performance GaN p-n junction photodetectors for solar ultraviolet applications
Semiconductor Science and Technology, Vol. 13, Núm. 9, pp. 1042-1046
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Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111)
MRS Internet Journal of Nitride Semiconductor Research, Vol. 3
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The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)
Journal of Crystal Growth, Vol. 183, Núm. 1-2, pp. 23-30
1997
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Exciton and donor-acceptor recombination in undoped GaN on Si(111)
Semiconductor Science and Technology, Vol. 12, Núm. 11, pp. 1396-1403
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Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
MRS Internet Journal of Nitride Semiconductor Research, Vol. 2
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Yellow luminescence in Mg-doped GaN
MRS Internet Journal of Nitride Semiconductor Research, Vol. 2
1996
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Optical and electrical characterization of GaN layers grown on silicon and sapphire substrates
Solid-State Electronics, Vol. 40, Núm. 1-8, pp. 81-84
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Yellow band and deep levels in undoped MOVPE GaN
MRS Internet Journal of Nitride Semiconductor Research, Vol. 1