Publications by the researcher in collaboration with Fernando Calle Gómez (12)

2001

  1. Reliability of Schottky Contacts on AlGaN

    Physica Status Solidi (A) Applied Research, Vol. 188, Núm. 1, pp. 367-370

2000

  1. Analysis and modeling of AlxGa1-xN-based Schottky barrier photodiodes

    Journal of Applied Physics, Vol. 88, Núm. 4, pp. 2081-2091

1998

  1. Analysis of the visible and UV electroluminescence in homojunction GaN LED's

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 3

  2. Experimental evidence for a Be shallow acceptor in GaN grown on Si(111) by molecular beam epitaxy

    Semiconductor Science and Technology, Vol. 13, Núm. 10, pp. 1130-1133

  3. High-performance GaN p-n junction photodetectors for solar ultraviolet applications

    Semiconductor Science and Technology, Vol. 13, Núm. 9, pp. 1042-1046

  4. Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111)

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 3

  5. The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

    Journal of Crystal Growth, Vol. 183, Núm. 1-2, pp. 23-30

1997

  1. Exciton and donor-acceptor recombination in undoped GaN on Si(111)

    Semiconductor Science and Technology, Vol. 12, Núm. 11, pp. 1396-1403

  2. Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 2

  3. Yellow luminescence in Mg-doped GaN

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 2

1996

  1. Optical and electrical characterization of GaN layers grown on silicon and sapphire substrates

    Solid-State Electronics, Vol. 40, Núm. 1-8, pp. 81-84

  2. Yellow band and deep levels in undoped MOVPE GaN

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 1