Enrique Calleja Pardo-rekin lankidetzan egindako argitalpenak (15)

1997

  1. Characterization and modeling of photoconductive GaN ultraviolet detectors

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 2

  2. Exciton and donor-acceptor recombination in undoped GaN on Si(111)

    Semiconductor Science and Technology, Vol. 12, Núm. 11, pp. 1396-1403

  3. Photoconductor gain mechanisms in GaN ultraviolet detectors

    Applied Physics Letters, Vol. 71, Núm. 7, pp. 870-872

  4. Reactive ion etching of GaN layers using SF6

    Semiconductor Science and Technology, Vol. 12, Núm. 12, pp. 1654-1657

  5. Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 2

  6. XPS study of Au/GaN and Pt/GaN contacts

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 2

  7. Yellow luminescence in Mg-doped GaN

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 2

1996

  1. Behavior of silicon-, sulfur-, and tellurium-related DX centers in liquid-phase-epitaxy and vapor-phase-epitax alloys

    Physical Review B - Condensed Matter and Materials Physics, Vol. 53, Núm. 12, pp. 7736-7741

  2. Optical and electrical characterization of GaN layers grown on silicon and sapphire substrates

    Solid-State Electronics, Vol. 40, Núm. 1-8, pp. 81-84

  3. Yellow band and deep levels in undoped MOVPE GaN

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 1