Publicaciones en las que colabora con Fernando Calle Gómez (12)

2001

  1. Reliability of Schottky Contacts on AlGaN

    Physica Status Solidi (A) Applied Research, Vol. 188, Núm. 1, pp. 367-370

2000

  1. Analysis and modeling of AlxGa1-xN-based Schottky barrier photodiodes

    Journal of Applied Physics, Vol. 88, Núm. 4, pp. 2081-2091

1998

  1. Analysis of the visible and UV electroluminescence in homojunction GaN LED's

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 3

  2. Experimental evidence for a Be shallow acceptor in GaN grown on Si(111) by molecular beam epitaxy

    Semiconductor Science and Technology, Vol. 13, Núm. 10, pp. 1130-1133

  3. High-performance GaN p-n junction photodetectors for solar ultraviolet applications

    Semiconductor Science and Technology, Vol. 13, Núm. 9, pp. 1042-1046

  4. Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111)

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 3

  5. The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

    Journal of Crystal Growth, Vol. 183, Núm. 1-2, pp. 23-30

1997

  1. Exciton and donor-acceptor recombination in undoped GaN on Si(111)

    Semiconductor Science and Technology, Vol. 12, Núm. 11, pp. 1396-1403

  2. Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 2

  3. Yellow luminescence in Mg-doped GaN

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 2

1996

  1. Optical and electrical characterization of GaN layers grown on silicon and sapphire substrates

    Solid-State Electronics, Vol. 40, Núm. 1-8, pp. 81-84

  2. Yellow band and deep levels in undoped MOVPE GaN

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 1