Francisco Javier
Rodríguez Sánchez
Catedrático/a de Universidad
Universidad Politécnica de Madrid
Madrid, EspañaPublicaciones en colaboración con investigadores/as de Universidad Politécnica de Madrid (22)
2023
-
A low-cost digital twin for real-time monitoring of photovoltaic panels
IEEE International Symposium on Industrial Electronics
-
High-performance IoT Module for controlling and testing PV panels
IEEE International Symposium on Industrial Electronics
2017
-
Cooperative systems
Intelligent Vehicles: Enabling Technologies and Future Developments (Elsevier), pp. 227-274
2009
-
Fast uncooled low density FPA of VPD PbSe
Proceedings of SPIE - The International Society for Optical Engineering
-
SAE formula project for developing personal and professional skills in automotive engineers
International Journal of Engineering Education, Vol. 25, Núm. 3, pp. 585-594
2004
-
A color vision-based lane tracking system for autonomous driving on unmarked roads
Autonomous Robots, Vol. 16, Núm. 1, pp. 95-116
-
VIRTUOUS: Vision-based road transportation for unmanned operation on urban-like scenarios
IEEE Transactions on Intelligent Transportation Systems, Vol. 5, Núm. 2, pp. 69-83
2003
-
Vision-based navigation system for autonomous urban transport vehicles in outdoor environments
IEEE Intelligent Vehicles Symposium, Proceedings
2001
-
Reliability of Schottky Contacts on AlGaN
Physica Status Solidi (A) Applied Research, Vol. 188, Núm. 1, pp. 367-370
2000
-
Analysis and modeling of AlxGa1-xN-based Schottky barrier photodiodes
Journal of Applied Physics, Vol. 88, Núm. 4, pp. 2081-2091
1999
-
High-speed, low-noise metal-semiconductor-metal ultraviolet photodetectors based on GaN
Applied Physics Letters, Vol. 74, Núm. 5, pp. 762-764
1998
-
Automation of an Industrial Fork Lift Truck, Guided by Artificial Vision in Open Environments
Autonomous Robots, Vol. 5, Núm. 2, pp. 215-231
-
Experimental evidence for a Be shallow acceptor in GaN grown on Si(111) by molecular beam epitaxy
Semiconductor Science and Technology, Vol. 13, Núm. 10, pp. 1130-1133
-
High-performance GaN p-n junction photodetectors for solar ultraviolet applications
Semiconductor Science and Technology, Vol. 13, Núm. 9, pp. 1042-1046
-
The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)
Journal of Crystal Growth, Vol. 183, Núm. 1-2, pp. 23-30
1997
-
Exciton and donor-acceptor recombination in undoped GaN on Si(111)
Semiconductor Science and Technology, Vol. 12, Núm. 11, pp. 1396-1403
-
Photoconductor gain mechanisms in GaN ultraviolet detectors
Applied Physics Letters, Vol. 71, Núm. 7, pp. 870-872
-
Reactive ion etching of GaN layers using SF6
Semiconductor Science and Technology, Vol. 12, Núm. 12, pp. 1654-1657
-
Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
MRS Internet Journal of Nitride Semiconductor Research, Vol. 2
1996
-
Behavior of silicon-, sulfur-, and tellurium-related DX centers in liquid-phase-epitaxy and vapor-phase-epitax alloys
Physical Review B - Condensed Matter and Materials Physics, Vol. 53, Núm. 12, pp. 7736-7741