Publicaciones en colaboración con investigadores/as de Universidad Politécnica de Madrid (22)

2023

  1. A low-cost digital twin for real-time monitoring of photovoltaic panels

    IEEE International Symposium on Industrial Electronics

  2. High-performance IoT Module for controlling and testing PV panels

    IEEE International Symposium on Industrial Electronics

2017

  1. Cooperative systems

    Intelligent Vehicles: Enabling Technologies and Future Developments (Elsevier), pp. 227-274

2009

  1. Fast uncooled low density FPA of VPD PbSe

    Proceedings of SPIE - The International Society for Optical Engineering

  2. SAE formula project for developing personal and professional skills in automotive engineers

    International Journal of Engineering Education, Vol. 25, Núm. 3, pp. 585-594

2004

  1. A color vision-based lane tracking system for autonomous driving on unmarked roads

    Autonomous Robots, Vol. 16, Núm. 1, pp. 95-116

  2. VIRTUOUS: Vision-based road transportation for unmanned operation on urban-like scenarios

    IEEE Transactions on Intelligent Transportation Systems, Vol. 5, Núm. 2, pp. 69-83

2001

  1. Reliability of Schottky Contacts on AlGaN

    Physica Status Solidi (A) Applied Research, Vol. 188, Núm. 1, pp. 367-370

2000

  1. Analysis and modeling of AlxGa1-xN-based Schottky barrier photodiodes

    Journal of Applied Physics, Vol. 88, Núm. 4, pp. 2081-2091

1999

  1. High-speed, low-noise metal-semiconductor-metal ultraviolet photodetectors based on GaN

    Applied Physics Letters, Vol. 74, Núm. 5, pp. 762-764

1997

  1. Exciton and donor-acceptor recombination in undoped GaN on Si(111)

    Semiconductor Science and Technology, Vol. 12, Núm. 11, pp. 1396-1403

  2. Photoconductor gain mechanisms in GaN ultraviolet detectors

    Applied Physics Letters, Vol. 71, Núm. 7, pp. 870-872

  3. Reactive ion etching of GaN layers using SF6

    Semiconductor Science and Technology, Vol. 12, Núm. 12, pp. 1654-1657

  4. Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 2

1996

  1. Behavior of silicon-, sulfur-, and tellurium-related DX centers in liquid-phase-epitaxy and vapor-phase-epitax alloys

    Physical Review B - Condensed Matter and Materials Physics, Vol. 53, Núm. 12, pp. 7736-7741