Publicaciones en las que colabora con Enrique Calleja Pardo (15)

1998

  1. Experimental evidence for a Be shallow acceptor in GaN grown on Si(111) by molecular beam epitaxy

    Semiconductor Science and Technology, Vol. 13, Núm. 10, pp. 1130-1133

  2. High-performance GaN p-n junction photodetectors for solar ultraviolet applications

    Semiconductor Science and Technology, Vol. 13, Núm. 9, pp. 1042-1046

  3. Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111)

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 3

  4. The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

    Journal of Crystal Growth, Vol. 183, Núm. 1-2, pp. 23-30

1997

  1. Characterization and modeling of photoconductive GaN ultraviolet detectors

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 2

  2. Exciton and donor-acceptor recombination in undoped GaN on Si(111)

    Semiconductor Science and Technology, Vol. 12, Núm. 11, pp. 1396-1403

  3. Photoconductor gain mechanisms in GaN ultraviolet detectors

    Applied Physics Letters, Vol. 71, Núm. 7, pp. 870-872

  4. Reactive ion etching of GaN layers using SF6

    Semiconductor Science and Technology, Vol. 12, Núm. 12, pp. 1654-1657

  5. Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 2

  6. XPS study of Au/GaN and Pt/GaN contacts

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 2

  7. Yellow luminescence in Mg-doped GaN

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 2

1996

  1. Behavior of silicon-, sulfur-, and tellurium-related DX centers in liquid-phase-epitaxy and vapor-phase-epitax alloys

    Physical Review B - Condensed Matter and Materials Physics, Vol. 53, Núm. 12, pp. 7736-7741

  2. Optical and electrical characterization of GaN layers grown on silicon and sapphire substrates

    Solid-State Electronics, Vol. 40, Núm. 1-8, pp. 81-84

  3. Yellow band and deep levels in undoped MOVPE GaN

    MRS Internet Journal of Nitride Semiconductor Research, Vol. 1

1995

  1. Deep level transient spectroscopy assessment of silicon contamination in AlGaAs layers grown by metalorganic vapor phase epitaxy

    Journal of Electronic Materials, Vol. 24, Núm. 8, pp. 1017-1022